The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Jun. 06, 2005
Applicant:
Cha Deok Dong, Kyungki-do, KR;
Inventor:
Cha Deok Dong, Kyungki-do, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a method for manufacturing a flash memory device, in which an oxidation process is carried out on the disclosed top surface of a semiconductor substrate to form a surface oxide film in the form of bird's beak with an appropriate width before conducting an etching process for trench. Thus, the present invention prevents the effect of thinning tunnel oxide film while reducing a critical dimension of an active region. And, it is possible to assure a normal cell operation by the Fowler-Nordheim (FN) tunneling effect owing to preventing the thinning tunnel oxide film.