The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Dec. 27, 2006
Bong Jun Kim, Seoul, KR;
Bong Jun Kim, Seoul, KR;
Dongbu HiTek Co., Ltd., Seoul, KR;
Abstract
Embodiments relate to a method for fabricating a semiconductor device. In embodiments, the method may include forming a gate dielectric layer on an active region of a semiconductor substrate defined by an isolation region to form a gate conductive layer pattern, etching the isolation region of the semiconductor substrate where the gate conductive layer pattern is formed, to form an isolation trench, forming a polyoxide layer on the gate conductive layer pattern and a sidewall oxide layer in the trench by carrying out an oxidation process, forming a spacer nitride layer on the polyoxide layer and a liner nitride layer on the sidewall oxide layer by carrying out a nitride layer forming process, and then forming a dielectric layer on an entire surface of the resultant structure to fill the trench.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile