The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Dec. 30, 2005
Applicants:
Sung Woong Chung, Gyeonggi-do, KR;
Sang Don Lee, Gyeonggi-do, KR;
Inventors:
Sung Woong Chung, Gyeonggi-do, KR;
Sang Don Lee, Gyeonggi-do, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed herein is a transistor for a semiconductor device and a method of forming the same. According to the present invention, a recess channel region is formed on a cell region to increase a channel length and a fin-type channel region is simultaneously formed on a peripheral circuit region to increase a channel area so as to simplify process steps, thereby improving the yield and productivity for manufacturing a semiconductor device.