The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Apr. 17, 2003
Stefan Bader, Regensburg, DE;
Dominik Eisert, Regensburg, DE;
Berthold Hahn, Hernau, DE;
Volker Härle, Waldetzenberg, DE;
Stefan Bader, Regensburg, DE;
Dominik Eisert, Regensburg, DE;
Berthold Hahn, Hernau, DE;
Volker Härle, Waldetzenberg, DE;
Osram GmbH, Munich, DE;
Abstract
A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.