The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
May. 05, 2006
Applicant:
Farzad Parsapour, Bartlett, TN (US);
Inventor:
Farzad Parsapour, Bartlett, TN (US);
Assignee:
Brother International Corporation, Bridgewater, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 1/304 (2006.01); H01J 1/30 (2006.01); H01J 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Described is a method for preparation of carbon nanotubes (CNTs) with medium to low-site density growth for use in field emission devices (FEDs). The method involves the deposition of a non-catalytic metal layer (interlayer), preferably a metallic conductor, onto the surface of a substrate, prior to the deposition of a catalytic layer (overlayer). The interlayer allows for only partial (sparse) growth of CNTs on the substrate, and helps to prevent resist layer 'lift-off' when photolithographic processing is employed.