The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Dec. 22, 2003
Yorinobu Kunimune, Kanagawa, JP;
Mieko Hasegawa, Kanagawa, JP;
Takamasa Itou, Kanagawa, JP;
Takeshi Takeda, Kanagawa, JP;
Hidemitsu Aoki, Kanagawa, JP;
Yorinobu Kunimune, Kanagawa, JP;
Mieko Hasegawa, Kanagawa, JP;
Takamasa Itou, Kanagawa, JP;
Takeshi Takeda, Kanagawa, JP;
Hidemitsu Aoki, Kanagawa, JP;
NEC Electronics Corporation, Kawasaki, Kanagawa, JP;
Abstract
The present invention provides a semiconductor device comprising a metal interconnect having considerably improved electromigration resistance and/or stress migration resistance. The copper interconnectcomprises a silicon-lower concentration regionand a silicon solid solution layerdisposed thereon. The silicon solid solution layerhas a structure, in which silicon atoms are introduced within the crystal lattice structure that constitutes the copper interconnectto be disposed within the lattice as inter-lattice point atoms or substituted atoms. The silicon solid solution layerhas the structure, in which the crystal lattice structure of copper (face centered cubic lattice; lattice constant is 3.6 angstrom) remains, while silicon atoms are introduced as inter-lattice point atoms or substituted atoms.