The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Jul. 09, 2004
Dong-seok Leem, Gwangju-si, KR;
June-o Song, Gwangju-si, KR;
Sang-ho Kim, Gwangju-si, KR;
Tae-yeon Seong, Gwangju-si, KR;
Dong-seok Leem, Gwangju-si, KR;
June-o Song, Gwangju-si, KR;
Sang-ho Kim, Gwangju-si, KR;
Tae-yeon Seong, Gwangju-si, KR;
Abstract
A thin film electrode for ohmic contact of a p-type GaN semiconductor includes first and second electrode layers sequentially stacked on a p-type GaN layer. The first electrode layer may include an Ni-based alloy, a Cu-based alloy, a Co-based alloy, or a solid solution capable of forming a p-type thermo-electronic oxide or may include a Ni-oxide doped with at least one selected from Al, Ga, and In. The second electrode layer may include at least one selected from the group consisting of Au, Pd, Pt, Ru, Re, Sc, Mg, Zn, V, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, Nb, Ca, Na, Sb, Li, In, Sn, Al, Ni, Cu, and Co. Furthermore, a method of fabricating the thin film electrode is provided.