The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Feb. 05, 2007
Kazuhiro Komatsu, Yokohama, JP;
Yasushi Sakuma, Tokyo, JP;
Daisuke Nakai, Yokohama, JP;
Kaoru Okamoto, Yokohama, JP;
Ryu Washino, Chigasaki, JP;
Kazuhiro Komatsu, Yokohama, JP;
Yasushi Sakuma, Tokyo, JP;
Daisuke Nakai, Yokohama, JP;
Kaoru Okamoto, Yokohama, JP;
Ryu Washino, Chigasaki, JP;
Opnext Japan, Inc., , JP;
Abstract
In a mesa type PIN-PD formed using a heavily doped semiconductor material, a high frequency response is degraded as slow carriers occur in a heavily doped layer when light incident into a light receiving section transmits through an absorbing layer and reaches the heavily doped layer on a side near the substrate. In a p-i-n multilayer structure, a portion corresponding to a light receiving section of a heavily doped layer on a side near a substrate is previously made thinner than the periphery of the light receiving section by an etching or selective growth technique, over which an absorbing layer and another heavily doped layer are grown to form the light receiving section of mesa structure. This makes it possible to form a good ohmic contact and to realize a PIN-PD with excellent high frequency response characteristics.