The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Sep. 27, 2006
Applicant:
Juri Kato, Chino, JP;
Inventor:
Juri Kato, Chino, JP;
Assignee:
Seiko Epson Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a semiconductor layer formed partially on a semiconductor substrate by epitaxial growth, an embedded oxide film embedded between the semiconductor substrate and the semiconductor layer, first and second gate electrodes disposed on sidewalls of the semiconductor layer, a source layer formed in the semiconductor layer and disposed in the first gate electrode, and a drain layer formed in the semiconductor layer and disposed in the second gate electrode, wherein the sidewalls of the semiconductor layer are film-forming surfaces of the epitaxial growth.