The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Nov. 09, 2005
Michael Rueb, Faak am See, AT;
Michael Rueb, Faak am See, AT;
Infineon Technologies AG, Munich, DE;
Abstract
A process for producing structures in a semiconductor zone, has the steps of a) producing a trench () in the semiconductor zone (), b) filling the trench with a photoresist (), and c) exposing the photoresist () using ion beams (), d) developing the photoresist (). The energy density and ion dose for the ion beams () are selected in such a way that the photoresist () is only chemically changed at defined depths, so as to produce two regions, in the first region () of which the photoresist has been chemically changed at the defined depths by the ion beams (), and in the second region of which the photoresist has been left chemically unchanged, so that during the developing step the photoresist is removed in precisely one of the two regions.