The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Dec. 29, 2006
Applicants:
Dong Min Jeon, Suwon, KR;
Jae Ho Han, Daejeon, KR;
Pil Geun Kang, Suwon, KR;
Inventors:
Assignee:
Samsung Electro-Mechanics Co., Ltd., Gyunggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2006.01); H01L 27/15 (2006.01); H01L 31/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
A GaN-based LED comprises a substrate; an an-type GaN layer formed on the substrate; an active layer formed on a predetermined region of the n-type GaN layer; a p-type GaN layer formed on the active layer; a transparent electrode formed on the p-type GaN layer; a p-electrode formed on the transparent electrode; an n-type electrode formed on the n-type GaN layer on which the active layer is not formed; and a protective film formed on a resulting structure between the transparent electrode and the n-type electrode, the protective film being composed of a plasma-oxidized transparent layer.