The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Jun. 29, 2007
Guee Hwang Sim, Gangleung-si, KR;
Woo Yung Jung, Seoul, KR;
Guee Hwang Sim, Gangleung-si, KR;
Woo Yung Jung, Seoul, KR;
Hynix Semiconductor, Icheon-si, KR;
Abstract
A method of manufacturing a flash memory device includes providing a substrate having an insulating layer, a first mask layer over the insulating layer, a second mask layer over the first mask layer, a first photoresist pattern over the second mask layer, the first photoresist pattern having a first pitch. A material layer is provided over the first photoresist pattern. The material layer is etched to convert the material layer into a material layer pattern having a second pitch that is less than the first pitch. The second hard mask layer is etched using the material layer pattern to form a second hard mask layer pattern that extends along a first direction. A second photoresist pattern is etched, the second photoresist pattern defining a first region that is not exposed and a second region that is exposed, the second region extending along a second direction that is orthogonal to the first direction. The first hard mask layer is etched using the second photoresist pattern to form a first hard mask layer pattern having an angular shape.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile