The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Dec. 29, 2006
Applicants:
Steven Arthur Vitale, Murphy, TX (US);
Shaofeng Yu, Plano, TX (US);
Inventors:
Steven Arthur Vitale, Murphy, TX (US);
Shaofeng Yu, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method comprises forming a gate stack comprising a polysilicon layer, a metal layer and a polysilicon layer over a gate dielectric and substrate. The metal layer is buried inside the gate stack to alloy the silicon and metal at the bottom of the gate. The gate stack is then etched to form a gate. A silicidation is then performed to form a silicide at the bottom of the gate. Optionally, a second metal layer may be formed on top of the gate stack. As such, during silicidation, a silicide may be formed at the top of the gate.