The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Nov. 27, 2006
Jae Suk Lee, Icheon-si, KR;
Jae Suk Lee, Icheon-si, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
A method for forming a dielectric layer having a low dielectric constant and a method for forming copper wiring using the same are provided. In the method for forming a dielectric, an etch stop layer and a first dielectric are sequentially formed on a semiconductor substrate. Next, the first dielectric is selectively etched to form a pattern, and a second dielectric is formed thereon. Here, the second dielectric may be formed using a plasma enhanced chemical deposition method to have pores or voids therein. Then, the dielectric is planarized and a damascene copper wiring is formed. Since the dielectric includes pores or voids, it may have a very low dielectric constant, which results in an improvement in RC delay.