The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Jul. 30, 2004
Applicant:
Ryo Nakamura, Aichi-ken, JP;
Inventor:
Ryo Nakamura, Aichi-ken, JP;
Assignees:
Toyoda Gosei Co., Ltd., Nishikasugai-gun, Aichi-ken, JP;
Sumitomo Electric Industries, Ltd., Chuo-ku, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 25/20 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of making a group III nitride-based compound semiconductor has the steps of: providing a semiconductor substrate with a polished surface, the semiconductor substrate being of group III nitride-based compound semiconductor; and growing a semiconductor epitaxial growth layer of group III nitride-based compound semiconductor on the semiconductor substrate. The polished surface is an inclined surface that has an off-angle θ of 0.15 degrees or more and 0.6 degrees or less to a-face, c-face or m-face of the semiconductor substrate.