The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Dec. 28, 2007
Jin-dong Song, Seoul, KR;
Ju-young Lim, Ulsan, KR;
Joonyeon Chang, Seoul, KR;
Won Jun Choi, Seoul, KR;
Jin-Dong Song, Seoul, KR;
Ju-Young Lim, Ulsan, KR;
Joonyeon Chang, Seoul, KR;
Won Jun Choi, Seoul, KR;
Korea Institute of Science and Technology, Seoul, KR;
Abstract
Disclosed is a method of manufacturing a semiconductor device whereby InAsSbsemiconductor layer is formed on an easily available and economical semiconductor substrate such as a GaAs substrate or a Si substrate. According to the method, a quantum dot layer is formed between a semiconductor substrate and a semiconductor layer to reduce defects caused by lattice mismatch between the semiconductor layer and the semiconductor layer. The method may improve the growth speed of the semiconductor layer. In addition, because the InSb layer provided by the present invention has an electron mobility greater at room temperature, it may improve the quality and productivity of the semiconductor device.