The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Aug. 25, 2006
Po-chun Liu, Taichung County, TW;
Wen-yueh Liu, Taipei, TW;
Chih-ming Lai, Pingtung County, TW;
Yih-der Guo, Hsinchu, TW;
Jenq-dar Tsay, Kaohsiung, TW;
Po-Chun Liu, Taichung County, TW;
Wen-Yueh Liu, Taipei, TW;
Chih-Ming Lai, Pingtung County, TW;
Yih-Der Guo, Hsinchu, TW;
Jenq-Dar Tsay, Kaohsiung, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A fabricating method of nitride semiconductor substrate is provided. First, a first substrate including a first base material, a nitride semiconductor template layer stacked on the first base material, and a first dielectric layer stacked on the nitride semiconductor template layer is provided. Then, the first dielectric layer and the nitride semiconductor template layer are patterned, and a second substrate including a second base material and a second dielectric layer stacked on the second base material is provided. Next, the nitride semiconductor template layer and the first dielectric layer of the first substrate are transferred onto the second dielectric layer of the second substrate through bonding and transferring processes, and then a nitride semiconductor thick film is grown from the nitride semiconductor template layer through an epitaxy process. After that, the nitride semiconductor thick film and the second substrate are separated.