The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Mar. 05, 2009
Wei-su Chen, Hsinchu, TW;
Wei-Su Chen, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
In a method of fabricating a phase change memory (PCM) device, a substrate having bottom electrodes formed therein is provided. A first dielectric layer having cup-shaped thermal electrodes is formed over the substrate. Second dielectric layers are formed on the substrate. Stacked structures are formed on the substrate. A PC material film is formed over the substrate and covers the stacked structures and the second dielectric layers. The PC material film is anisotropically etched to form PC material spacers on sidewalls of the stacked structures, and each of the PC material spacers physically and electrically contacts each of the cup-shaped thermal electrodes and top electrodes. The PC material spacers include phase change material. The PC material spacers are over-etched to remove the PC material film on the sidewalls of the second dielectric layers.