The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Apr. 30, 2008
Youn Joon Sung, Gyeonggi-do, KR;
Su Hee Chae, Gyeonggi-do, KR;
Youn Joon Sung, Gyeonggi-do, KR;
Su Hee Chae, Gyeonggi-do, KR;
Samsung Electro-Mechanics Co., Ltd., Gyunggi-Do, KR;
Abstract
Provided is a method of isolating semiconductor laser diodes (LDs), the method including the steps of: preparing a substrate; forming a plurality of semiconductor LDs on the substrate, each semiconductor LD including an n-type semiconductor layer, an active layer, a p-type semiconductor layer, an n-electrode, a ridge portion, and a p-electrode, the ridge portion being formed by etching the p-type semiconductor layer such that a portion of the p-type semiconductor layer protrudes, the p-electrode being formed on the ridge portion; partially forming base cut lines on the surface of the substrate excluding the ridge portions; and isolating the semiconductor LDs into a bar shape along the base cut lines.