The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Mar. 25, 2005
Hirohisa Kawasaki, Yokohama, JP;
Kazunari Ishimaru, Yokohama, JP;
Kunihiro Kasai, Yokohama, JP;
Yasunori Okayama, Fujisawa, JP;
Hirohisa Kawasaki, Yokohama, JP;
Kazunari Ishimaru, Yokohama, JP;
Kunihiro Kasai, Yokohama, JP;
Yasunori Okayama, Fujisawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device manufacturing method is disclosed. The method is to form a second semiconductor layer which has less susceptibility to adopting insulative characteristics than a first semiconductor layer on the first semiconductor layer. Then, grooves which expose portions of the second and first semiconductor layers are formed to extend from the upper surface of the second semiconductor layer into the first semiconductor layer. Next, portions of the first and second semiconductor layers which are exposed to the grooves are changed into an insulator form to fill the grooves with the insulator-form portions of the first semiconductor layer.