The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Dec. 22, 2006
Hiroyuki Kinoshita, San Jose, CA (US);
Ning Cheng, San Jose, CA (US);
Minghao Shen, Sunnyvale, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Ning Cheng, San Jose, CA (US);
Minghao Shen, Sunnyvale, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
Methods are provided for fabricating memory devices. A method comprises fabricating charge-trapping stacks overlying a silicon substrate and forming bit line regions in the substrate between the charge trapping stacks. Insulating elements are formed overlying the bit line regions between the stacks. The charge-trapping stacks are etched to form two complementary charge storage nodes and to expose portions of the silicon substrate. Silicon is grown on the exposed silicon substrate by selective epitaxial growth and is oxidized. A control gate layer is formed overlying the complementary charge storage nodes and the oxidized epitaxially-grown silicon.