The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Mar. 05, 2007
Philippe Coronel, Barraux, FR;
Arnaud Pouydebasque, Eindhoven, NL;
Philippe Coronel, Barraux, FR;
Arnaud Pouydebasque, Eindhoven, NL;
STMicroelectronics Crolles 2 SAS, Crolles, FR;
Abstract
A method of forming a silicon germanium conduction channel under a gate stack of a semiconductor device, the gate stack being formed on a silicon layer on an insulating layer, the method including growing a silicon germanium layer over said silicon layer and heating the device such that germanium condenses in the silicon layer such that a silicon germanium channel is formed between the gate stack and the insulating layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile