The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Dec. 31, 2007
Min-suk Lee, Kyoungki-do, KR;
Min-Suk Lee, Kyoungki-do, KR;
Hynix Semiconductor Inc., , KR;
Abstract
A method for fabricating a semiconductor device includes forming at least one gate pattern over a substrate, forming a first insulation layer over the gate patterns and the substrate, etching the first insulation layer in a peripheral region to form at least one gate pattern spacer in the peripheral region, forming a second insulation layer over the substrate structure, etching the second insulation layer in a cell region to a given thickness, forming an insulation structure over the substrate structure, and etching the insulation structure, the etched first insulation layer and second insulation layer in the cell region to form a contact hole.