The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Dec. 27, 2007
Hee-jung Yang, Namnyangju-si, KR;
Dong-sun Kim, Gnyangfu-si, KR;
Du-seok OH, Daejeon, KR;
Won-joon Ho, Cheongfu-si, KR;
Hee-Jung Yang, Namnyangju-si, KR;
Dong-sun Kim, Gnyangfu-si, KR;
Du-Seok Oh, Daejeon, KR;
Won-Joon Ho, Cheongfu-si, KR;
LG Display Co., Ltd., Seoul, KR;
Abstract
According to an embodiment, a method of fabricating a thin film transistor comprises forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer on the gate insulating layer, the semiconductor layer corresponding to the gate electrode; forming first and second barrier patterns on the semiconductor layer, the first and second barrier patterns including copper nitride; and forming source and drain electrodes on the first and second barrier patterns, respectively, the source and drain electrodes including pure copper.