The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Jan. 31, 2008
Ryu Washino, Chigasaki, JP;
Susumu Sorimachi, Komoro, JP;
Daisuke Nakai, Yokohama, JP;
Kaoru Okamoto, Yokohama, JP;
Shigenori Hayakawa, Atsugi, JP;
Ryu Washino, Chigasaki, JP;
Susumu Sorimachi, Komoro, JP;
Daisuke Nakai, Yokohama, JP;
Kaoru Okamoto, Yokohama, JP;
Shigenori Hayakawa, Atsugi, JP;
Opnext Japan, Inc., , JP;
Abstract
In an optical semiconductor device that emits or receives light substantially perpendicularly to or in parallel to an active surface formed on a semiconductor substrate, the optical semiconductor device, an electrode that is formed on the active surface side and connected to the active surface is stepped or tapered at an end of the electrode. The electrode of the optical semiconductor device is formed of three layers including an adhesive layer, a diffusion prevention layer, and an Au layer, and the stepped configuration or the taped configuration is formed by a difference of the thickness of the Au layer or the thickness of the adhesive layer/diffusion prevention layer/Au layer.