The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Mar. 27, 2006
Greg Charache, East Windsor, NJ (US);
John Hostetler, Hightstown, NJ (US);
Ching-long Jiang, Bele Mead, NJ (US);
Raymond J. Menna, Newtown, PA (US);
Radosveta Radionova, Plainsboro, NJ (US);
Robert W. Roff, Westfield, NJ (US);
Holger Schlüter, Princeton, NJ (US);
Greg Charache, East Windsor, NJ (US);
John Hostetler, Hightstown, NJ (US);
Ching-Long Jiang, Bele Mead, NJ (US);
Raymond J. Menna, Newtown, PA (US);
Radosveta Radionova, Plainsboro, NJ (US);
Robert W. Roff, Westfield, NJ (US);
Holger Schlüter, Princeton, NJ (US);
Trumpf Photonics Inc., Cranbury, NJ (US);
Abstract
Methods of preparing front and back facets of a diode laser include controlling an atmosphere within a first chamber, such that an oxygen content and a water vapor content are controlled to within predetermined levels and cleaving the diode laser from a wafer within the controlled atmosphere of the first chamber to form a native oxide layer hating a predetermined thickness on the front and back facets of the diode laser. After cleavage, the diode laser is transported from the first chamber to a second chamber within a controlled atmosphere, the native oxide layer on the front and back facets of the diode laser is partially removed, an amorphous surface layer is formed on the front and back facets of the diode laser, and the front and back facets of the diode laser are passivated.