The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
May. 18, 2005
Hironobu Iwawaki, Atsugi, JP;
Shinjiro Okada, Isehara, JP;
Takao Takiguchi, Chofu, JP;
Satoshi Igawa, Fujisawa, JP;
Masashi Hashimoto, Kawasaki, JP;
Manabu Furugori, Machida, JP;
Kengo Kishino, Yokohama, JP;
Minako Kurokawa, Atsugi, JP;
Hironobu Iwawaki, Atsugi, JP;
Shinjiro Okada, Isehara, JP;
Takao Takiguchi, Chofu, JP;
Satoshi Igawa, Fujisawa, JP;
Masashi Hashimoto, Kawasaki, JP;
Manabu Furugori, Machida, JP;
Kengo Kishino, Yokohama, JP;
Minako Kurokawa, Atsugi, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
The present invention provides a light-emitting device which can be driven at a low voltage and has high luminance, high efficiency, and has a long lifetime even as an organic EL device using phosphorescence. The light-emitting device of the present invention is a light-emitting device including an anode, a cathode, and an organic light-emitting layer sandwiched between the anode and the cathode, in which the organic light-emitting layer is composed of a host material and one or more kinds of dopants, a difference in electron affinity between the host material and at least one kind of the dopants is 0.3 eV or less, and a difference in ionization potential between the host material and the at least one kind of the dopants is 0.8 eV or less.