The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
Sep. 20, 2007
Boris Kobrin, Walnut Creek, CA (US);
Romuald Nowak, Cupertino, CA (US);
Jeffrey D. Chinn, Foster City, CA (US);
Richard C. Yi, Santa Cruz, CA (US);
Boris Kobrin, Walnut Creek, CA (US);
Romuald Nowak, Cupertino, CA (US);
Jeffrey D. Chinn, Foster City, CA (US);
Richard C. Yi, Santa Cruz, CA (US);
Applied Microstructures, Inc., San Jose, CA (US);
Abstract
We have devised an apparatus useful for and a method of removing impurities from vaporous precursor compositions used to generate reactive precursor vapors from which thin films/layers are formed under sub-atmospheric conditions. The method is particularly useful when the layer deposition apparatus provides for precise addition of quantities of different combinations of reactants during a single step or when there are a number of different individual steps in the layer formation process, where the presence of impurities has a significant affect on both the quantity of reactants being charged and the overall composition of the reactant mixture from which the layer is deposited. The method is particularly useful when the vapor pressure of a liquid reactive precursor is less than about 250 Torr at atmospheric pressure.