The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
May. 12, 2008
Applicants:
You Sung Kim, Seoul, KR;
Kwang Jun Cho, Seoul, KR;
Inventors:
You Sung Kim, Seoul, KR;
Kwang Jun Cho, Seoul, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of operating a non-volatile memory device changes a read voltage by determining a degree that threshold voltages of memory cells are changed and overlap each other. The method of operating the non-volatile memory device includes performing a least significant bit (LSB) program of memory cells and determining a first error rate, performing a most significant bit (MSB) program of the memory cells and determining a second error rate, and setting a read voltage corresponding to a value at which the first and second error rates are minimum values.