The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Feb. 01, 2008
Applicant:
Alexandre Valentian, Saint Egreve, FR;
Inventor:
Alexandre Valentian, Saint Egreve, FR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 19/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention concerns a process and a circuit designed to improve the life duration of electronic field-effect integrated circuit transistors and in particular those with a thin film gate dielectric. According to the invention, an aging measurement tis supplied by measuring the charge or discharge time at a reference voltage Vof the gate of a field effect transistor T, previously pre-charged to a predefined test voltage V, and brought to high impedance. Depending on the aging measurement obtained, the operational voltage measurement conditions of the transistor can be maintained or modified to reduce the stress applied to the dielectric.