The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Nov. 30, 2004
Tadashi Itoh, Toyonaka, JP;
Masaaki Ashida, Ibaraki, JP;
Tadashi Itoh, Toyonaka, JP;
Masaaki Ashida, Ibaraki, JP;
Japan Science & Technology Agency, Saitama, JP;
Abstract
A CaFbuffer layer () is formed on a CaF(111) substrate () by an MBE method. Furthermore, a CuCl thin film is grown on the CaFbuffer layer () by the MBE method while irradiating it with an electron beam to form an electro beam irradiation film (). Subsequently, a CuCl thin film is grown by the MBE method without the irradiation of electron beam to form an electron beam non-irradiation film (), thereby thus forming a CuCl thin film (a) including the electron beam irradiation film () and the electron beam non-irradiation film (). Consequently, a CuCl thin film () exhibiting high planarity and crystallinity can be formed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile