The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Jul. 26, 2006
Shien Cho, Kanagawa, JP;
Shien Cho, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A nonvolatile memory semiconductor device and a method for manufacturing thereof are provided to avoid deterioration of the tunnel insulating film to increase frequency of writing data on the nonvolatile memory semiconductor device and erasing thereof. Concentration of atomic nitrogen in a tunnel insulating filmof a nonvolatile memory semiconductor deviceis 0.1 to 5 atomic %. In addition, larger amount of atomic nitrogen in the tunnel insulating filmis distributed primarily in the interface layer of the tunnel insulating film, and concentration of atomic nitrogen in the interface layer is 10 times or more higher than concentration of atomic nitrogen in other portion of the tunnel insulating film. Further, density per unit area of atomic nitrogen in the surface of the tunnel insulating filmcontacting with the floating gate is equal to or lower than 4×10atoms/cm.