The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Jul. 07, 2004
Yong-hoon Son, Gyeonggi-do, KR;
Si-young Choi, Gyeonggi-do, KR;
Byeong-chan Lee, Gyeonggi-do, KR;
Deok-hyung Lee, Gyeonggi-do, KR;
In-soo Jung, Gyeonggi-do, KR;
Yong-Hoon Son, Gyeonggi-do, KR;
Si-Young Choi, Gyeonggi-do, KR;
Byeong-Chan Lee, Gyeonggi-do, KR;
Deok-Hyung Lee, Gyeonggi-do, KR;
In-Soo Jung, Gyeonggi-do, KR;
Abstract
Metal-oxide-semiconductor (MOS) transistors having elevated source/drain regions and methods of fabricating the same are provided. The MOS transistors may include a gate pattern formed to cross over a predetermined region of a substrate. Recessed regions are provided in the substrate adjacent to the gate pattern. Epitaxial layers are provided on bottom surfaces of the recessed regions. High concentration impurity regions are provided in the epitaxial layers. The recessed regions may be formed using a chemical dry etching techniques.