The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Apr. 18, 2006
Takashi Shinohara, Suwa, JP;
Yuji Shinohara, Suwa, JP;
Koichi Terao, Suwa, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
The object of the present invention is to provide a method of manufacturing a semiconductor element which can produce a semiconductor element provided with a semiconductor layer having a high carrier transport ability, a semiconductor element manufactured by the semiconductor element manufacturing method, an electronic device provided with the semiconductor element, and electronic equipment having a high reliability. In order to achieve the object, the present invention is directed to a method of manufacturing a semiconductor element having an anode, a cathode, and a hole transport layer provided between the anode and the cathode, the method comprising steps of: a first step for forming layers mainly comprised of a hole transport material having polymerizable groups X on the side of one surface of the anode and on the side of one surface of the cathode, respectively, and a second step for obtaining the hole transport layer by integrating the two layers together by polymerizing the hole transport materials via a polymerization reaction through their polymerizable groups in a state that the layer on the side of the anode and the layer on the side of the cathode are made contact with each other.