The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2010

Filed:

Jan. 23, 2007
Applicants:

Ha-jin Kim, Yongin-si, KR;

In-taek Han, Yongin-si, KR;

Young-chul Choi, Yongin-si, KR;

Kwang-seok Jeong, Yongin-si, KR;

Inventors:

Ha-Jin Kim, Yongin-si, KR;

In-Taek Han, Yongin-si, KR;

Young-Chul Choi, Yongin-si, KR;

Kwang-Seok Jeong, Yongin-si, KR;

Assignee:

Samsung SDI Co., Ltd., Maetan-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a Carbon NanoTube (CNT) structure and a method of manufacturing a Field Emission Device (FED) using the method of forming a CNT structure includes: forming an electrode on a substrate, forming a buffer layer on the electrode, forming a catalyst layer in a particle shape on the buffer layer, etching the buffer layer exposed through the catalyst layer, and growing CNTs from the catalyst layer formed on the etched buffer layer.


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