The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2010

Filed:

May. 10, 2007
Applicants:

Eun Soo Kim, Incheon-Si, KR;

Jung Geun Kim, Seoul, KR;

Suk Joong Kim, Icheon-si, KR;

Inventors:

Eun Soo Kim, Incheon-Si, KR;

Jung Geun Kim, Seoul, KR;

Suk Joong Kim, Icheon-si, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a metal wire in a semiconductor device is disclosed The method includes the steps of etching an insulating layer formed on a semiconductor substrate to form a dual damascene pattern, forming a barrier metal layer in the dual damascene pattern, forming a metal layer on the barrier metal layer, and filling the dual damascene pattern with a conductive material to form a metal wire.


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