The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Nov. 25, 2008
Shanghui L. Tu, Tainan, TW;
Hung-shern Tsai, Tainan, TW;
Jui-chun Chang, Hsinchu, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
The invention provides a method for forming a deep well region of a power device, including: providing a substrate with a first sacrificial layer thereon; forming a first patterned mask layer on the first sacrificial layer exposing a first open region; performing a first doping process to the first open region to form a first sub-doped region; removing the first patterned mask layer and the first sacrificial layer; forming an epitaxial layer on the substrate; forming a second sacrificial layer on the epitaxial layer; forming a second patterned mask layer on the second sacrificial layer exposing a second open region; performing a second doping process to the second open region to form a second sub-doped region; removing the second patterned mask layer; performing an annealing process to make the first and the second sub-doped regions form a deep well region; and removing the second sacrificial layer.