The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Dec. 14, 2007
George R. Brandes, Raleigh, NC (US);
Arpan Chakraborty, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Monica Hansen, Santa Barbara, CA (US);
Steven Denbaars, Goleta, CA (US);
George R. Brandes, Raleigh, NC (US);
Arpan Chakraborty, Goleta, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Monica Hansen, Santa Barbara, CA (US);
Steven Denbaars, Goleta, CA (US);
Cree, Inc., Durham, NC (US);
Abstract
A substrate comprising a trench lateral epitaxial overgrowth structure including a trench cavity, wherein the trench cavity includes a growth-blocking layer or patterned material supportive of a coalescent Pendeo layer thereon, on at least a portion of an inside surface of the trench. Such substrate is suitable for carrying out lateral epitaxial overgrowth to form a bridged lateral overgrowth formation overlying the trench cavity. The bridged lateral overgrowth formation provides a substrate surface on which epitaxial layers can be grown in the fabrication of microelectronic devices such as laser diodes, high electron mobility transistors, ultraviolet light emitting diodes, and other devices in which low dislocation density is critical. The epitaxial substrate structures of the invention can be formed without the necessity for deep trenches, such as are required in conventional Pendeo epitaxial overgrowth structures.