The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
May. 26, 2008
Chien-ting Lin, Hsin-Chu, TW;
Che-hua Hsu, Hsin-Chu Hsien, TW;
Yao-tsung Huang, Kaohsiung County, TW;
Guang-hwa MA, Hsinchu, TW;
Chien-Ting Lin, Hsin-Chu, TW;
Che-Hua Hsu, Hsin-Chu Hsien, TW;
Yao-Tsung Huang, Kaohsiung County, TW;
Guang-Hwa Ma, Hsinchu, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A method for fabricating a hybrid orientation substrate includes steps of providing a direct silicon bonding (DSB) wafer having a first substrate with (100) crystalline orientation and a second substrate with (110) crystalline orientation directly bonded on the first substrate, forming and patterning a first blocking layer on the second substrate to define a first region not covered by the first blocking layer and a second region covered by the first blocking layer, performing an amorphization process to transform the first region of the second substrate into an amorphized region, and performing an annealing process to recrystallize the amorphized region into the orientation of the first substrate and to make the second region stressed by the first blocking layer.