The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Oct. 10, 2007
Young-geun Park, Suwon-si, KR;
Han-mei Choi, Seoul, KR;
Seung-hwan Lee, Suwon-si, KR;
Sun-jung Kim, Suwon-si, KR;
Se-hoon OH, Hwaseong-si, KR;
Young-sun Kim, Suwon-si, KR;
Young-Geun Park, Suwon-si, KR;
Han-Mei Choi, Seoul, KR;
Seung-Hwan Lee, Suwon-si, KR;
Sun-Jung Kim, Suwon-si, KR;
Se-Hoon Oh, Hwaseong-si, KR;
Young-Sun Kim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of manufacturing a non-volatile memory device includes forming a tunnel isolation layer forming a tunnel isolation layer on a substrate, forming a conductive pattern on the tunnel isolation layer, forming a lower silicon oxide layer on the conductive pattern, treating a surface portion of the lower silicon oxide layer with a nitridation treatment to form a first silicon oxynitride layer on the lower silicon oxide layer, forming a metal oxide layer on the first silicon oxynitride layer, forming an upper silicon oxide layer on the metal oxide layer, and forming a conductive layer on the upper silicon oxide layer.