The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Dec. 14, 2008
Wei-chieh Lin, Hsinchu, TW;
Hsin-yu Hsu, Chiayi County, TW;
Hsin-yen Chiu, Taichung County, TW;
Shih-chieh Hung, Changhua County, TW;
Ho-tai Chen, Taipei County, TW;
Jen-hao Yeh, Kaohsiung County, TW;
Li-cheng Lin, Taipei, TW;
Wei-Chieh Lin, Hsinchu, TW;
Hsin-Yu Hsu, Chiayi County, TW;
Hsin-Yen Chiu, Taichung County, TW;
Shih-Chieh Hung, Changhua County, TW;
Ho-Tai Chen, Taipei County, TW;
Jen-Hao Yeh, Kaohsiung County, TW;
Li-Cheng Lin, Taipei, TW;
Anpec Electronics Corporation, Hsin-Chu, TW;
Abstract
A method of forming a power device includes providing a substrate, a semiconductor layer having at least a trench and being disposed on the substrate, a gate insulating layer covering the semiconductor layer, and a conductive material disposed in the trench, performing an ion implantation process to from a body layer, performing a tilted ion implantation process to from a heavy doped region, forming a first dielectric layer overall, performing a chemical mechanical polishing process until the body layer disposed under the heavy doped region is exposed to form source regions on the opposite sides of the trench, and forming a source trace directly covering the source regions disposed on the opposite sides of the trench.