The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Mar. 27, 2007
Katsuaki Natori, Yokohama, JP;
Masayuki Tanaka, Yokohama, JP;
Akihito Yamamoto, Naka-gun, JP;
Katsuyuki Sekine, Yokohama, JP;
Ryota Fujitsuka, Yokohama, JP;
Daisuke Nishida, Yokohama, JP;
Yoshio Ozawa, Yokohama, JP;
Katsuaki Natori, Yokohama, JP;
Masayuki Tanaka, Yokohama, JP;
Akihito Yamamoto, Naka-gun, JP;
Katsuyuki Sekine, Yokohama, JP;
Ryota Fujitsuka, Yokohama, JP;
Daisuke Nishida, Yokohama, JP;
Yoshio Ozawa, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, wherein forming the second insulating film comprises forming an insulating film containing silicon using source gas not containing chlorine, and forming an insulating film containing oxygen and a metal element on the insulating film containing silicon.