The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2010

Filed:

May. 17, 2006
Applicants:

Ho Lee, Gyeonggi-do, KR;

Tetsuji Ueno, Gyeonggi-do, KR;

Hwa-sung Rhe, Gyeonggi-do, KR;

Inventors:

Ho Lee, Gyeonggi-do, KR;

Tetsuji Ueno, Gyeonggi-do, KR;

Hwa-Sung Rhe, Gyeonggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming an integrated circuit includes selectively forming active channel regions for NMOS and PMOS transistors on a substrate parallel to a <100> crystal orientation thereof and selectively forming source/drain regions of the NMOS transistors with Carbon (C) impurities therein.


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