The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Jun. 30, 2008
Applicants:
Jun-hee Cho, Gyeonggi-do, KR;
Sang-hoon Park, Gyeonggi-do, KR;
Inventors:
Jun-Hee Cho, Gyeonggi-do, KR;
Sang-Hoon Park, Gyeonggi-do, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a semiconductor device includes forming a sacrificial layer over a substrate, forming a contact hole in the sacrificial layer, forming a pillar to fill the contact hole. The pillar laterally extends up to a surface of the sacrificial layer and then the sacrificial layer is removed. The method further includes forming a gate dielectric layer over an exposed sidewall of the pillar, and forming a gate electrode over the gate dielectric layer. The gate electrode surrounds the sidewall of the pillar.