The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
May. 22, 2008
Myung-kwan Ryu, Yongin-si, KR;
Sang-yoon Lee, Seoul, KR;
Je-hun Lee, Seoul, KR;
Tae-sang Kim, Seoul, KR;
Jang-yeon Kwon, Seongnam-si, KR;
Kyung-bae Park, Seoul, KR;
Kyung-seok Son, Seoul, KR;
Ji-sim Jung, Incheon, KR;
Myung-kwan Ryu, Yongin-si, KR;
Sang-yoon Lee, Seoul, KR;
Je-hun Lee, Seoul, KR;
Tae-sang Kim, Seoul, KR;
Jang-yeon Kwon, Seongnam-si, KR;
Kyung-bae Park, Seoul, KR;
Kyung-seok Son, Seoul, KR;
Ji-sim Jung, Incheon, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is a method of manufacturing a ZnO-based thin film transistor (TFT). The method may include forming source and drain electrodes using one or two wet etchings. A tin (Sn) oxide, a fluoride, or a chloride having relatively stable bonding energy against plasma may be included in a channel layer. Because the source and drain electrodes are formed by wet etching, damage to the channel layer and an oxygen vacancy may be prevented or reduced. Because the material having higher bonding energy is distributed in the channel layer, damage to the channel layer occurring when a passivation layer is formed may be prevented or reduced.