The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 23, 2010

Filed:

Jan. 19, 2006
Applicants:

Mark W. Hart, San Jose, CA (US);

Christie R. K. Marrian, San Jose, CA (US);

Gary M. Mcclelland, Palo Alto, CA (US);

Charles T. Rettner, San Jose, CA (US);

Hemantha K. Wickramasinghe, San Jose, CA (US);

Inventors:

Mark W. Hart, San Jose, CA (US);

Christie R. K. Marrian, San Jose, CA (US);

Gary M. McClelland, Palo Alto, CA (US);

Charles T. Rettner, San Jose, CA (US);

Hemantha K. Wickramasinghe, San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 21/00 (2006.01); H01L 21/82 (2006.01); G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabrication and a structure of a self-aligned (crosspoint) memory device comprises lines (wires) in a first direction and in a second direction. The wires in the first direction are formed using a hard mask material that is resistant to the pre-selected etch processes used for creation of the lines in both the first and the second direction. Consequently, the hard mask material for the lines in the first direction form part of the memory stack.


Find Patent Forward Citations

Loading…