The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Feb. 20, 2007
Wei Gao, Vancouver, WA (US);
Bruce D. Ulrich, Beaverton, OR (US);
Yoshi Ono, Camas, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
A method of fabricating a grayscale mask includes preparing a quartz wafer; depositing a layer of SiNon the quartz wafer; depositing a layer of titanium/TEOS directly on the SiNlayer on the backside of the quartz wafer; removing the layer of SiNfrom the front side of the quartz wafer; depositing a layer of SRO directly on the front side of the quartz wafer; patterning a microlens array on the SRO layer; etching the SRO layer to form a microlens array in the SRO layer; depositing a layer of titanium; patterning and etching the titanium layer; depositing a layer of SiONon the SRO microlens array; CMP to planarize the layer of SiONremoving the titanium/TEOS layer from the backside of the quartz wafer; bonding the planarized SiONto a quartz reticle plate; and etching to remove SiNfrom the bonded structure to form a grayscale mask reticle.