The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 2010

Filed:

Aug. 30, 2007
Applicants:

Matthew W. Mcadam, Vancouver, CA;

Francis Beaudoin, Brossard, CA;

Inventors:

Matthew W. McAdam, Vancouver, CA;

Francis Beaudoin, Brossard, CA;

Assignee:

PMC-Sierra, Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03G 3/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

A biasing circuit and method for minimizing distortion in a MOS transistor. A first CW source provides a first CW signal at the input of a replica transistor to obtain an output signal at the output of the replica transistor. The output signal is mixed with another CW signal having a frequency equal to N times that of the first CW signal, N being an integer greater than one, to obtain a mixed signal having a DC component with an intensity proportional to the N-order distortion present in the output signal. A bias voltage to minimize this distortion is then applied to the input of the original transistor on which the replica transistor is based, the bias voltage determined in accordance with the intensity of the DC component.


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