The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 2010

Filed:

Jan. 05, 2007
Applicants:

Francois Pagette, Wappingers Falls, NY (US);

Christian Lavoie, Ossining, NY (US);

Anna Topol, Wappingers Falls, NY (US);

Inventors:

Francois Pagette, Wappingers Falls, NY (US);

Christian Lavoie, Ossining, NY (US);

Anna Topol, Wappingers Falls, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/102 (2006.01);
U.S. Cl.
CPC ...
Abstract

Embodiments of the invention provide a semiconductor device including a collector in an active region; a first and a second sub-collector, the first sub-collector being a heavily doped semiconductor material adjacent to the collector and the second sub-collector being a silicided sub-collector next to the first sub-collector; and a silicided reach-through in contact with the second sub-collector, wherein the first and second sub-collectors and the silicided reach-through provide a continuous conductive pathway for electrical charges collected by the collector from the active region. Embodiments of the invention also provide methods of fabricating the same.


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