The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2010
Filed:
Jun. 01, 2006
Hiromichi Tanaka, Daito, JP;
Hideto Yoshimura, Daito, JP;
Sumio Terakawa, Ibaraki, JP;
Masafumi Kimata, Shiga-ken, JP;
Hiromichi Tanaka, Daito, JP;
Hideto Yoshimura, Daito, JP;
Sumio Terakawa, Ibaraki, JP;
Masafumi Kimata, Shiga-ken, JP;
Funal Electric Co., Ltd., Daito-shi, JP;
Abstract
Each of three light receiving sections has a P-type well having a P-type layer and an N-type layer formed therein. The P-type layer is diffused from substrate surface to depth d. A PN junction forming portion of the N-type layer is diffused from depth dto depth dwhich is greater than depth dso as to form, with the P-type well, a PN junction of a photodiode at depth d. Depths das well as depths dof the three light receiving sections are different from each other. The N-type layer has a charge output portion which is diffused from the PN junction to the substrate surface, and which is coupled by circuit coupling to a MOS transistor for reading out charge. This allows each light receiving section to have spectral characteristics, thereby providing a solid state imaging element and a solid state imaging device without using color filters.